Talk:Programmable metallization cell

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A fact from Programmable metallization cell appeared on Wikipedia's Main Page in the Did you know column on 3 November 2007. The text of the entry was as follows:

Did you know... that the programmable metallization cell is one of many contenders aiming to become a Flash RAM replacement?

A record of the entry may be seen at Wikipedia:Recent additions/2007/November.

Wikipedia

Spam?

This device was developed at a university and is being brought to market by a university-derived spin-off? Sounds like an attempt to interest venture capital. Delmlsfan 14:41, 3 November 2007 (UTC)[reply]

It's not spam... it's a new development and I'm looking forwards to it. The article could be considered a bit advertising though, I'll fix it up when I find time :) ♥ Fr ed il 15:00, 3 November 2007 (UTC) —Preceding unsigned comment added by Fredil Yupigo (talk • contribs) [reply]

Comparison Section in error?

Shouldn't the Comparison Section read:

Flash is based on the floating gate concept, essentially a modified transistor. Conventional MOS transistors have three connections, the source, drain and gate. The gate is the essential component of the transistor, controlling the resistance between the source and drain, and thereby acting as a switch. In the floating gate transistor, the gate is isolated and embedded in an insulating layer base that allows it to trap electrons, leaving the transistor switched on (or off) for extended periods of time. The floating gate can be re-written by imposing a relatively high voltage across it from the source-drain circuit and a second gate electrode.

Jim, K7JEB 18:46, 3 November 2007 (UTC)[reply]

Nanoionics

Nanoionics was coined in 17 January 1992. (Despotuli (talk) 12:14, 11 December 2007 (UTC))[reply]