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- D
- Edit made at Wikidata
- r
- Edit flagged by ORES
- N
- New page
- m
- Minor edit
- b
- Bot edit
- (±123)
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9 November 2025
- diffhist Semiconductor 15:10 +51 Pancho507 talk contribs (Clarified) Tags: Mobile edit Mobile web edit Advanced mobile edit
- diffhist Semiconductor 15:03 +1 Pancho507 talk contribs (Ce) Tags: Mobile edit Mobile web edit Advanced mobile edit
- diffhist Semiconductor 15:03 +57 Pancho507 talk contribs (Added info) Tags: Mobile edit Mobile web edit Advanced mobile edit
- diffhist Semiconductor 15:02 +258 Pancho507 talk contribs (Added info) Tags: Mobile edit Mobile web edit Advanced mobile edit
8 November 2025
- diffhist m Silicon 23:30 +63 90lbNose talk contribs Tag: Visual edit
- diffhist m Silicon 23:28 +2 90lbNose talk contribs Tag: Visual edit
- diffhist Silicon 23:27 +58 90lbNose talk contribs Tag: Visual edit
- diffhist Silicon 23:24 +115 90lbNose talk contribs (Got rid of a huge run on sentence and removed redundancy of thermal oxidation and LOCOS since locos is just masked oxidation.) Tag: Visual edit
- diffhist m Silicon 19:08 +14 Plantsurfer talk contribs (Renamed references using RefRenamer named citation)
- diffhist Silicon 18:25 +96 90lbNose talk contribs (Removed the claim that silicon was the most popular platform for high power electronics as they resist avalanche breakdown. This is incorrect as Si has a band gap of 1.1 eV which is relatively low. The low band gap means it is venerable to breakdown and will become intrinsically doped at high temperatures. Power electronics are predominantly made on the Gallium Nitride or Aluminum nitride platform which has a much larger gap of 3+ eV) Tag: Visual edit
- diffhist Silicon 18:04 +193 90lbNose talk contribs (Added image of silicon wafer) Tag: Visual edit