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Date | Name | Thumbnail | Size | Description |
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04:07, 5 December 2007 | CBE im2.png (file) | ![]() |
87 KB | Growth kinetics involved in a) conventional MBE, b) MOCVD, and c) CBE. W.T. Tsang, “CBE of Ga0.47In0.53As/InP quantum wells and heterostructure devices”. J. Cryst. Growth. 81, 261 (1987). |
04:06, 5 December 2007 | CBE im1.png (file) | ![]() |
173 KB | Basic processes inside the growth chambers of a) MOCVD, b) MBE, and c) CBE. W.T. Tsang, “From Chemical Vapor Epitaxy to Chemical Beam Epitaxy”. J. Cryst. Growth. 95, 121 (1989). |