Hochleistungsimpulsmagnetronsputtern
High Power Impulse Magnetron Sputtering (HIPIMS, also known as High Impact Power Magnetron Sputtering and High Power Pulsed Magnetron Sputtering, HPPMS) is a method for physical vapor deposition of thin films which is based on magnetron sputter deposition. HIPIMS utilises extremely high power densities of the order of kWcm-2 in short pulses (impulses) of tens of microseconds at low duty cycle (on/off time ratio) of < 10%.
Originator of HIPIMS was Vladimir Kouznetsov who first report about it in 1999 and also own some patents of this technology.
HIPIMS is used for:
- adhesion enhancing pretreatment of the substrate prior to coating deposition (substrate etching)
- thin film deposition
HIPIMS Plasma Discharge
HIPIMS plasma is generated by a glow discharge where the discharge current density can reach up to 6 Acm-2, whilst the discharge voltage is maintained at several hundred volts[1]. The discharge is homogeneously distributed across the surface of the cathode of the chamber. HIPIMS generates a high density plasma of the order of 1013 ions cm-3 [1] containing high fractions of target metal ions.
Substrate pretreatement by HIPIMS
Substrate pretreatment in a plasma environment is required prior to deposition of thin films on mechanical components such as automotive parts, metal cutting tools and decorative fittings. The substrates are immersed in a plasma and biased to a high voltage of a few hundred volts. This causes high energy ion bombardment that sputters away any contamination. In cases when the plasma contains metal ions, they can be implanted into the substrate to a depth of a few nm. HIPIMS is used to generate a plasma with a high density and high proportion of metal ions. When looking at the film-substrate interface in cross-section, one can see a clean interface. Epitaxy or atomic registry is typical between the crystal of a nitride film and the crystal of a metal substrate[2]. HIPIMS has been used for the pretreatment of steel substrates for the first time in February 2001 by A.P. Ehiasarian.[3]
Thin Film Deposition by HIPIMS
Thin films deposited by HIPIMS at discharge current density > 0.5 Acm-2 have a dense columnar structure with no voids. Copper films deposited by HIPIMS are able to fill high aspect ratio trenches
HIPIMS has been used for the deposition of transition metal nitride (CrN) thin films for the first time in February 2001 by A.P. Ehiasarian. The films had a dense microstructure, were free of large scale defects and had low sliding wear coefficient[3].
References
- ↑ a b Vorlage:Citation.
- ↑ Vorlage:Citation.
- ↑ a b Vorlage:Citation.
Further reading
- J. Alami, P. Eklund, J. Emmerlich, O. Wilhelmsson, U. Jansson, H. Högberg, L. Hultman, and U. Helmersson: High-power impulse magnetron sputtering of Ti–Si–C thin films from a Ti3SiC2 compound target. In: Thin Solid Films. 515. Jahrgang, Nr. 4. Elsevier B.V., 5. Dezember 2006, S. 1731–1736, doi:10.1016/j.tsf.2006.06.015.
- Vorlage:Cite paper
- Ehiasarian, A P and Bugyi, R: Industrial Size High Power Impulse Magnetron Sputtering. 2004, S. 486–490 (csa.com).
- Ulf Helmersson, Martina Lattemann, Johan Bohlmark, Arutiun P. Ehiasarian, and Jon Tomas Gudmundsson: Ionized physical vapor deposition (IPVD): A review of technology and applications. In: Thin Solid Films. 513. Jahrgang, 1–2. Elsevier B.V., 14. August 2006, S. 1–24, doi:10.1016/j.tsf.2006.03.033.
- S. Konstantinidis, J.P. Dauchot, and M. Hecq: Titanium oxide thin films deposited by high-power impulse magnetron sputtering. In: Thin Solid Films. 515. Jahrgang, Nr. 3. Elsevier B.V., 23. November 2006, S. 1182–1186, doi:10.1016/j.tsf.2006.07.089.