Light-emitting transistor
A light-emitting transistor or LET is a form of transistor that emits light. Higher efficiency than light-emitting diode (LED) is possible.
| Working principle | Electroluminescence |
|---|---|
| Inventor | Milton Feng Nick Holonyak |
History
Reported in the January 5, 2004 issue of the journal Applied Physics Letters, Milton Feng and Nick Holonyak, the inventor of the first practical light-emitting diode (LED) and the first semiconductor laser to operate in the visible spectrum, made the world's first light-emitting transistor. This hybrid device, fabricated by Feng's graduate student Walid Hafez, had one electrical input and two outputs (electrical output and optical output) and operated at a frequency of 1 MHz. The device was made of indium gallium phosphide, indium gallium arsenide, and gallium arsenide, and emitted infrared photons from the base layer.[1][2]
See also
References
- ^ https://spectrum.ieee.org/semiconductors/devices/first-lightemitting-transistor First Light-Emitting Transistor
- ^ https://illinois.edu/blog/view/6367/207740 New light-emitting transistor could revolutionize electronics industry