Static induction transistor
 | This article relies largely or entirely on a single source. (January 2019) |
Static induction transistor (SIT) is a high power, high frequency transistor device. It is a vertical structure device with short multichannel. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a field-effect transistor (FET). For the SIT, it is not limited by the surface breakdown between gate and drain, and can operate at a very high current and voltage.
Characteristics
An SIT has:
- short channel length
- low gate series resistance
- low gate-source capacitance
- small thermal resistance
- low noise
- low distortion
- high audio frequency power capability
- short turn-on and turn-off time, typically 0.25 μs
History
The SIT was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950.[1]
See also
References
- ^ F. Patrick McCluskey; Thomas Podlesak; Richard Grzybowski, eds. (1996). High Temperature Electronics. CRC Press. p. 82. ISBN 0-8493-9623-9.
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