Multiple-emitter transistor
A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters. Collector current flows if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be performed using a single transistor. Multiple-emitter transistors replace the diodes of diode–transistor logic, and allow reduction of switching time and power dissipation.[1][2]
Logic gate use of multiple-emitter transistors was patented in 1961 in the UK and in the US in 1962.[4]
References
- ^ Jacob Millman, Microelectronics: Digital and Analog Circuits and Systems, McGraw-Hill, 1979 ISBN 0-07-042327-X, pp.106-107
- ^ Douglas J. Hamilton, William G Howard, Basic Integrated Circuit Engineering, McGraw Hill, 1975, ISBN 0-07-025763-9, pp. 457-467
- ^ http://aries.ucsd.edu/NAJMABADI/CLASS/ECE65/06-W/NOTES/BJT1.pdf Bipolar-Junction(BJT) transistors
- ^ B. A. Boulter, The Multiple Emitter Transistor In Low Power Logic Circuits in Edward Keonjian (ed) Micropower Electronics, Elsevier, 2013, ISBN 148315503X,p. 105 ff
External links
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