Ballistic collection transistor
The ballistic collection transistor is the bipolar transistor exhibiting a ballistic conduction resulting in significant velocity overshoot.[1]. Initial demostration of ballistic conduction in gallium arsenide was done in 1985 by IBM researchers.[2] The amplifier with 40 GHz bandwidth based on heterojunction bipolar transistor gallium arsenide technology implementing ballistic collection transistors was developed in 1994 by Nippon Telegraph and Telephone researchers.[3]
References
- ^ Chang, M F; Ishibashi, T. Current Trends In Heterojunction Bipolar Transistors. World Scientific Publishing Co. Pte. p. 126-129. ISBN 981-02-2097-9.
{{cite book}}:|access-date=requires|url=(help) - ^ Nathan, M. I.; Heiblum, M. (February 1986). "A gallium arsenide ballistic transistor?". IEEE Spectrum. 23 (2): 45-47. doi:10.1109/MSPEC.1986.6371000. Retrieved 9 March 2018.
- ^ Ishibashi, T.; Yamauchi, Y.; Sano, E.; Nakajima, H.; Matsuoka, Y. (September 1994). "BALLISTIC COLLECTION TRANSISTORS AND THEIR APPLICATIONS". International Journal of High Speed Electronics and Systems. 5 (3): 349. doi:10.1142/S0129156494000152. Retrieved 9 March 2018.