Induced high electron mobility transistor

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Timestamp: 20170703112321 11:23, 3 July 2017 (UTC)
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An induced high electron mobility transistor is a form of high electron mobility transistor (HEMT) which provides the flexibility to tune different electron densities with top gate. This is because the charge carriers are "induced" to the 2DEG plane rather than created by dopants. Compared to their modulation-doped counterparts, the absence of a doped layer enhances the electron mobility significantly.

This level of cleanliness provides research opportunities in the field of Quantum Billiard for quantum chaos studies, or applications in ultra stable and ultra sensitive electronic devices.

Researchers from the Quantum Electronic Devices Group (QED) at the Condensed Matter Physics Department, School of Physics at the University of New South Wales have created both n-type and p-type HEMT for studying fundamental quantum physics of electronic devices.

External links

University of New South Wales, Quantum Electronic Devices Group