Modulation doping
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Modulation doping is a technique for fabricating semiconductors such that the free charge carriers are spatially separated from the donors. Because this eliminates scattering from the donors, modulation-doped semiconductors have very high carrier mobilities.
History
Modulation doping was conceived in Bell Labs in 1977 following a conversation between Horst Störmer and Ray Dingle[1], and implemented shortly afterwards by Arthur Gossard. In 1977, Störmer and Dan Tsui used a modulation-doped wafer to discover the fractional quantum Hall effect.
Implementation
Modulation-doped semiconductor crystals are commonly grown by epitaxy to allow successive layers of different semiconductor species to be deposited. One common structure uses a layer of AlGaAs deposited over GaAs, with Si n-type donors in the AlGaAs.[2]
Applications
Field effect transistors
Modulation-doped transistors can reach high electrical mobilities and therefore fast operation. A modulation-doped field-effect transistor is known as a MODFET.[3]
Low-temperature electronics
One advantage of modulation doping is that the charge carriers cannot become trapped on the donors even at the lowest temperatures. For this reason, modulation-doped heterostructures allow electronics operating at cryogenic temperatures.
Quantum computing
Modulation-doped two-dimensional electron gases can be gated to create quantum dots. Electrons trapped in these dots can then be operated as quantum bits. [4]
- ^ https://www.nobelprize.org/nobel_prizes/physics/laureates/1998/stormer-bio.html
- ^ http://link.springer.com/chapter/10.1007%2F978-94-009-5073-3_14
- ^ https://www.jedec.org/standards-documents/dictionary/terms/modulation-doped-field-effect-transistor-modfet
- ^ R. Hanson, L. P. Kouwenhoven, J. R. Petta, S. Tarucha, and L. M. K. Vandersypen (2009). "Spins in few-electron quantum dots". Rev. Mod. Phys. 79 (2): 1217. doi:10.1103/RevModPhys.79.1217.
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