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Modulation doping

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Modulation doping is a technique for fabricating semiconductors such that the free charge carriers are spatially separated from the donors. Because this eliminates scattering from the donors, modulation-doped semiconductors have very high carrier mobilities.

History

Modulation was conceived in Bell Labs in 1977 following a conversation between Horst Störmer and Ray Dingle[1], and implemented shortly afterwards by Art Gossard. In 1977, Störmer and Dan Tsui used a modulation-doped wafer to discover the fractional quantum Hall effect.

Applications

Low-temperature electronics

Quantum computing

Field effect transistors

Modulation-doped transistors can reach high mobilities and therefore fast operation. A modulation-doped field-effect transistor is known as a MODFET.[2]

  1. ^ https://www.nobelprize.org/nobel_prizes/physics/laureates/1998/stormer-bio.html
  2. ^ https://www.jedec.org/standards-documents/dictionary/terms/modulation-doped-field-effect-transistor-modfet
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