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Modulation doping

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Modulation doping is a technique for fabricating semiconductors such that the free charge carriers are spatially separated from the donors. Because this eliminates scattering from the donors, modulation-doped semiconductors have very high carrier mobilities.

History

Modulation was conceived in Bell Labs in 1977 following a conversation between Horst Störmer and Ray Dingle[1], and implemented shortly afterwards by Art Gossard.