Jump to content

Multiple-emitter transistor

From Wikipedia, the free encyclopedia
This is an old revision of this page, as edited by Bender the Bot (talk | contribs) at 14:46, 22 September 2016 (External links: http→https for Google Books and Google News using AWB). The present address (URL) is a permanent link to this revision, which may differ significantly from the current revision.

A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of TTL NAND logic gates. Input signals are applied to the emitters. Collector current stops flowing only if all emitters are driven by the logical low voltage, thus performing a NAND logical operation using a single transistor. Multiple-emitter transistors replace diodes of DTL and allow reduction of switching time and power dissipation.