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Third-generation photovoltaic cell

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Third generation photovoltaic cells are solar cells that are potentially able to overcome the Shockley–Queisser limit of 31-41% power efficiency for single bandgap solar cells. This includes a range of alternatives to cells made of semiconducting p-n junctions ("first generation") and thin film cells ("second generation"). Common third-generation systems include multi-layer ("tandem") cells made of amorphous silicon or gallium arsenide, while more theoretical developments include frequency conversion, hot-carrier effects and other multiple-carrier ejection techniques.[1] [2][3][4]

Background

Solar cells can be thought of as visible light counterparts to radio receivers. A receiver consists of three basic parts; an antenna that converts the radio waves (light) into wave-like motions of electrons in the antenna material, an electronic valve that traps the electrons as they pop off the end of the antenna, and a tuner that amplifies electrons of a selected frequency. It is possible to build a solar cell identical to a radio, a system known as an optical rectenna, but to date these have not been practical. The third-generation solar cell was developed by Jacob S. Gibbs and Brinsley Coleberd Cite error: A <ref> tag is missing the closing </ref> (see the help page). In September 2013, a four layer cell reached 44.7 percent efficiency.[5])

Numerical analysis shows that the "perfect" single-layer solar cell should have a bandgap of 1.13 eV, almost exactly that of silicon. Such a cell can have a maximum theoretical power conversion efficiency of 33.7% - the solar power below red (in the infrared) is lost, and the extra energy of the higher colors is also lost. For a two layer cell, one layer should be tuned to 1.64 eV and the other at 0.94 eV, with a theoretical performance of 44%. A three-layer cell should be tuned to 1.83, 1.16 and 0.71 eV, with an efficiency of 48%. A theoretical "infinity-layer" cell would have a theoretical efficiency of 64%.[citation needed]

Technologies

The third generation label encompasses multiple technologies, though it includes non-semiconductor technologies (including polymers and biomimetics), quantum dot, tandem/multi-junction cells, intermediate band solar cell,[6] hot-carrier cells, photon upconversion and downconversion technologies, and solar thermal technologies, such as thermophotonics, which is one technology identified by Green as being third generation.[7]

It also includes:[8]

  • Silicon nanostructures
  • Modifying incident spectrum (concentration), to reach 300-500 suns and efficiencies of 32% (already attained in Sol3g cells[9]) to +50%.
  • Use of excess thermal generation (caused by UV light) to enhance voltages or carrier collection.
  • Use of infrared spectrum to produce electricity at night.

Types of third generation solar cells

While the new solar technologies that have been discovered center around nanotechnology, there are several different material methods currently used.

CdTe (second generation)

CIGS (copper indium gallium selenide) (second generation)

A-Si

Nanocrystal solar cell

See also

References

Footnotes

  1. ^ Attention: This template ({{cite doi}}) is deprecated. To cite the publication identified by doi:10.1063/1.1736034, please use {{cite journal}} (if it was published in a bona fide academic journal, otherwise {{cite report}} with |doi=10.1063/1.1736034 instead.
  2. ^ Attention: This template ({{cite doi}}) is deprecated. To cite the publication identified by doi:10.1002/pip.360, please use {{cite journal}} (if it was published in a bona fide academic journal, otherwise {{cite report}} with |doi=10.1002/pip.360 instead.
  3. ^ Martí, A.; Luque, A. (1 September 2003). Next Generation Photovoltaics: High Efficiency through Full Spectrum Utilization. CRC Press. ISBN 978-1-4200-3386-1.
  4. ^ Attention: This template ({{cite doi}}) is deprecated. To cite the publication identified by doi:10.1016/S1369-7021(07)70278-X, please use {{cite journal}} (if it was published in a bona fide academic journal, otherwise {{cite report}} with |doi=10.1016/S1369-7021(07)70278-X instead.
  5. ^ "Solar cell hits new world record with 44.7 percent efficiency". Retrieved 26 September 2013.
  6. ^ Weiming Wang, Albert S. Lin, Jamie D. Phillips (2009). "Intermediate band photovoltaic solar cell based on ZnTe:O". Appl. Phys. Lett. 95: 011103. doi:10.1063/1.3166863.{{cite journal}}: CS1 maint: multiple names: authors list (link)
  7. ^ Green, Martin (2003). Third Generation Photovoltaics: Advanced Solar Energy Conversion. Springer Science+Business Media. ISBN 3-540-40137-7.
  8. ^ UNSW School for Photovoltaic Engineering. "Third Generation Photovoltaics". Retrieved 2008-06-20.
  9. ^ Sol3g secures Triple Junction Solar Cells from Azur Space
  10. ^ DuPont™ Innovalight™ Silicon Inks for Selective Emitter Solar Cells
  11. ^ [1]
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