Jump to content

Static induction transistor

From Wikipedia, the free encyclopedia
This is an old revision of this page, as edited by 77.183.151.126 (talk) at 13:41, 25 July 2014 (m: answers.com (ditto about.com et al) is not a reliable source for anything.). The present address (URL) is a permanent link to this revision, which may differ significantly from the current revision.

Static induction transistor (SIT) is a high power, high frequency device. It is a vertical structure device with short multichannel. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a Field-effect transistor (FET). For the SIT, it is not limited by the surface breakdown between gate and drain, and can operate at a very high current and voltage.

Characteristics

An SIT has:

  • short channel length
  • low gate series resistance
  • low gate-source capacitance
  • small thermal resistance
  • low noise
  • low distortion
  • high audio frequency power capability
  • short turn-on and turn-off time, typically 0.25 μs

See also

References