Jump to content

Lely method

From Wikipedia, the free encyclopedia
This is an old revision of this page, as edited by KDS4444 (talk | contribs) at 04:16, 4 May 2013 (Created page with 'The '''Lely method''' or '''Lely process''' is a crystal growth technology the patent for which was filed in the Netherlands in 1954 and in the United States...'). The present address (URL) is a permanent link to this revision, which may differ significantly from the current revision.
(diff) ← Previous revision | Latest revision (diff) | Newer revision → (diff)

The Lely method or Lely process is a crystal growth technology the patent for which was filed in the Netherlands in 1954 and in the United States in 1955 by Jan Anderson Lely. The method concerns the "production of silicon carbide crystals by sublimation and to semi-conductive devices comprising such crystals."[1] The patent was subsequently granted on 30 September 1958, and was refined by D.R. Hamilton et al., and by V.P. Novokov and V.I. Ionov. [2]

References

  1. ^ Sublimation process for manufacturing silicon carbide crystals, 7 March 1955 {{citation}}: Cite has empty unknown parameters: |description=, |inventor2-first=, |inventorlink2=, |inventor2-last=, and |inventorlink= (help); Unknown parameter |country-code= ignored (help); Unknown parameter |inventor-first= ignored (help); Unknown parameter |inventor-last= ignored (help); Unknown parameter |issue-date= ignored (help); Unknown parameter |patent-number= ignored (help)
  2. ^ Byrappa, Kullaiah; Ohachi, Tadashi (2013). Crystal Growth Technology. William Andrew. ISBN 9780080946856. {{cite book}}: Cite has empty unknown parameters: |editorn-first= and |editorn-last= (help)

See also