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Low-level injection

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Low level injection conditions for a P-N junction refers to the state where the number of carriers generated are small compared to the background doping density of the material. Essentially, the semiconductor's majority carrier concentration will remain (relatively) unchanged, while the minority carrier concentration sees a large increase. In this condition minority carrier recombination rates are linear.[1]

In comparison a semiconductor in high injection means that the number of generated carriers is large compared to the background doping density of the material. In this condition minority carrier recombination rates are proportional to the number of carriers squared[2]

References

  1. ^ Jenny Nelson, The Physics of Solar Cells, Imperial College Press, UK, 2007 pp. 266-267
  2. ^ R. R. King, R. A. Sinton, and R. M. Swanson, Doped Surfaces in one sun, point-contact solar cells, Appl. Phys. Lett. 54 (15), 1989 pp. 1460-1462