Jump to content

Static induction transistor

From Wikipedia, the free encyclopedia
This is an old revision of this page, as edited by Hurricanefan25 (talk | contribs) at 15:22, 8 January 2012 (-d). The present address (URL) is a permanent link to this revision, which may differ significantly from the current revision.

Static induction transistor (SIT) is a high power, high frequency device. It is a vertical structure device with short multichannel. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a Field-effect transistor (FET). For the SIT, it is not limited by the surface breakdown between gate and drain, and can operate at a very high current and voltage.[1]

Characteristics

An SIT is:

  • similar to a vacuum triode[1]

See also

References

  1. ^ a b [1]