Jump to content

Low-level injection

From Wikipedia, the free encyclopedia
This is an old revision of this page, as edited by AvicBot (talk | contribs) at 14:38, 7 December 2011 (Bot: Grouping Multiple Issues together (Report error)). The present address (URL) is a permanent link to this revision, which may differ significantly from the current revision.

Low injection conditions for a P-N junction refers to the state where the number of carriers generated are small compared to the background doping density of the material. In this condition minority carrier recombination rates are linear.[1]

In comparison a semiconductor in high injection means that the number of generated carriers is large compared to the background doping density of the material. In this condition minority carrier recombination rates are proportional to the number of carriers squared[2]

In a S.C. , if the conc. of majority carriers is far greater than conc. of minority carriers ,it is called as LOW LEVEL INJECTION. Under low level injection, light is focussed on the S.C. to analyze PHOTO SENSITIVE EFFECT. LOW LEVEL INJECTION- current is due to minority carriers.

and i am awesome

References

  1. ^ Jenny Nelson, The Physics of Solar Cells, Imperial College Press, UK, 2007 pp. 266-267
  2. ^ R. R. King, R. A. Sinton, and R. M. Swanson, Doped Surfaces in one sun, point-contact solar cells, Appl. Phys. Lett. 54 (15), 1989 pp. 1460-1462