Induced high electron mobility transistor
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In contrast to a modulation-doped HEMT, an induced high electron mobility transistor provides the flexibility to tune different electron densities with a top gate, since the charge carriers are "induced" to the 2DEG plane rather than created by dopants. The absence of a doped layer enhances the electron mobility significantly when compared to their modulation-doped counterparts.
This level of cleanliness provides opportunities to perform research into the field of Quantum Billiard for quantum chaos studies, or applications in ultra stable and ultra sensitive electronic devices.
Researchers from the Quantum Electronic Devices Group (QED) at the Condensed Matter Physics Department, School of Physics at the University of New South Wales have created both n-type and p-type HEMT for studying fundamental quantum physics of electronic devices.