Jump to content

Multiple-emitter transistor

From Wikipedia, the free encyclopedia
This is an old revision of this page, as edited by SmackBot (talk | contribs) at 20:35, 5 January 2009 (Date maintenance tags and general fixes). The present address (URL) is a permanent link to this revision, which may differ significantly from the current revision.

A multiple-emitter transistor is the specialized Bipolar transistor mostly used at input of the TTL NAND logic gates. Than input signals are applied to the emitters, the collector current stop flowing only if all emitters are driven by the Logical high voltage, thus performing AND logical operation in single transistor. Multiple-emitter transistor replaces diodes of the DTL and allows reduction of switching time and power dissipation.

See also