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Talk:Deep reactive-ion etching

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This is an old revision of this page, as edited by 85.89.9.166 (talk) at 14:21, 3 August 2007. The present address (URL) is a permanent link to this revision, which may differ significantly from the current revision.

What is the difference between RIE and DRIE? Is it possible the aspect ratio (AR). Eg. AR<2 is RIE, while AR>2 is DRIE?

The DRIE descibed here is the pulsed DRIE, switching between etching and passivating. It does also exist a continuous DRIE, the cryogenic DRIE with a SF6+O2 mixture at cryogenic temperatures.

Best regards Preben Storas Preben.Storas@sintef.no

The gas SF6 by itself is actually not highly reactive. Quite the contrary. Peter Lund/82.143.195.87 06:10, 19 December 2006 (UTC)[reply]

What would have been interesting, is a discussion of the advantages and disadvantages of deep reactive-ion etching in it's applications in addition to the given techniques. 85.89.9.166

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