Draft:Direct Atomic Layer Processing
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Last edited by Ivan.kundrata (talk | contribs) 4 months ago. (Update) |
Direct Atomic layer processing(DALP), is a subset technique of Atomic Layer Deposition and Atomic Layer Etching, using exactly the same chemical processes. More specifically it is a subset of Spatial Atomic Layer deposition, where DALP is using micro-nozzles to have a fully constrained system in XYZ, essentially allowing for deposition with a micro-spot as seen on figure 1.

Introduction
DALP has via the development of micro-nozzles and appropriate driving gas systems achieved direct processing, essentially allowing ALD and ALE to be used in an additive manufacturing mode. This work via the spatial ALD route, where the precursor and reactant combination of ALD/ALE is separated in space via gas dynamics as seen on figure 1. Currently DALP is being developed by the company ATLANT 3D Nanosystems.
History
1960s
2000s
Surface reaction mechanisms
Thermal ALD
Plasma ALD
Spatial ALD
Photo-assisted ALD
Metal ALD
Catalytic SiO2 ALD
Applications
Microelectronics applications
Gate oxides
Transition-metal nitrides
Metal films
Magnetic recording heads
DRAM capacitors
Photovoltaic Applications
Electrooptic Applications
Thin Film Couplers
Biomedical applications
As a permeation barrier for plastics
Quality and its control
Advantages and limitations
Advantages
Disadvantages
Economic viability
Reaction time
Chemical limitations