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Draft:Direct Atomic Layer Processing

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Direct Atomic layer processing(DALP), is a subset technique of Atomic Layer Deposition and Atomic Layer Etching, using exactly the same chemical processes. More specifically it is a subset of Spatial Atomic Layer deposition, where DALP is using micro-nozzles to have a fully constrained system in XYZ, essentially allowing for deposition with a micro-spot as seen on figure 1.

Fig1. a) DALP Microfluidic nozzle concept: Schematic view of the nozzle in frontal view (top) and in cross-section (lower panel). b) Demonstration of direct pattern generated by a DALP deposition. Top is a thickness map by Low Energy Ion Spectroscopy, bottom is a Pt concentration map (log scale) by the same technique. From ref. [1]



Introduction

DALP has via the development of micro-nozzles and appropriate driving gas systems achieved direct processing, essentially allowing ALD and ALE to be used in an additive manufacturing mode. This work via the spatial ALD route, where the precursor and reactant combination of ALD/ALE is separated in space via gas dynamics as seen on figure 1. Currently DALP is being developed by the company ATLANT 3D Nanosystems.

History

1960s

2000s

Surface reaction mechanisms

Thermal ALD

Plasma ALD

Spatial ALD

Photo-assisted ALD

Metal ALD

Catalytic SiO2 ALD

Applications

Microelectronics applications

Gate oxides

Transition-metal nitrides

Metal films

Magnetic recording heads

DRAM capacitors

Photovoltaic Applications

Electrooptic Applications

Thin Film Couplers

Biomedical applications

As a permeation barrier for plastics

Quality and its control

Advantages and limitations

Advantages

Disadvantages

Economic viability

Reaction time

Chemical limitations



References